Quantification of Hydrogen Bonding States in SiN Films
Quantification of Si-H and N-H in SiN films using infrared absorption method.
It is possible to determine the concentrations of Si-H and N-H in SiN films through FT-IR analysis. Although it is also possible to determine hydrogen concentration using analyses such as SIMS, this provides the total hydrogen concentration and does not allow for the separate determination of hydrogen bonded to Si and hydrogen bonded to N. In FT-IR, the Si-H stretching vibration and N-H stretching vibration have peaks at different positions, allowing us to use these peaks to determine the respective hydrogen concentrations. Below are examples of analyses that determined the concentrations of Si-H and N-H in SiN films on Si substrates.
- Company：一般財団法人材料科学技術振興財団 MST
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